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| AUTOMOTIVE GRADE PD - 96279 * * * * * * * * * * 100% Tested at Probe * Designed for Automotive Application** Solderable Front Metal Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 C Short Circuit Rated Square RBSOA Positive VCE (on) Temperature Coefficient Tight Parameter Distribution AUIRG7CH80K6B-M C Features G E n-channel Applications * * Medium/High Power Inverters HEV/EV Inverter Benefits * High Efficiency in a Wide Range of Applications * Suitable for a Wide Range of Switching Frequencies due to Low VCE (on) and Low Switching Losses * Rugged Transient Performance for Increased Reliability * Excellent Current Sharing in Parallel Operation * Enables Double side cooling and higher current density * Eliminates wire bonds and Improves Reliability Chip Type AUIRG7CH80K6B VCE 1200V ICn 200A Die Size 12 X 12 mm2 Package Wafer Mechanical Parameter Die Size Emiter Pad Size (Included Gate Pad) Gate Pad Size Area Total / Active Thickness Wafer Size Flat Position Maximum-Possible Chips per Wafer Passivation Frontside Front Metal Backside Metal Die Bond Reject Ink Dot Size Recommended Storage Environment Note: 12.075x12.075 See Die Drawing mm2 Round, 1mm diameter 144/114 140 m 150 mm 0 Degrees 89 pcs Silicon Nitride Al (4m), Ti (0.1m), Ni (0.2m), Ag (0.6m) Al (0.1m), Ti (0.1m), Ni (0.4m), Ag (0.6m) Electrically conductive epoxy or solder 0.51mm min (black, center) Store in original container, in dry Nitrogen, <6 months at an ambient temperature of 23C * This IR product is 100% tested at wafer level and is manufactured using established, mature and well characterized processes. Due to restrictions in die level processing, die may not be equivalent to standard package products and are therefore offered with a conditional performance guarantee. The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and are provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed package and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured using IR's established processes. Programs for customer-specified testing are available upon request. IR has experienced assembly yields of generally 95% or greater for individual die; however, customer's results will vary. Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard package products and are therefore offered with a limited warranty as described in IR's applicable standard terms and conditions of sale. All IR die sales are subject to IR's applicable standard terms and conditions of sale, which are available upon request. For customers requiring a particular parameter to be guaranteed, special testing can be carried out or product can bepurchased as known good die. ** Technology qualified in sup-TO247 package according to AEC-Q101. www.irf.com 1 01/12/10 AUIRG7CH80K6B-M Maximum Ratings Parameter VCE IC(Nominal) ILM VGE TJ, TSTG Collector-Emitter Voltage, TJ=25C DC Collector Current, Limited by TJMAX Clamped Inductive Load Current Gate Emitter Voltage Max. 1200 200 800 30 Units V A A V C e c Operating Junction and Storage Temperature -40 to +175 Static Characteristics (Tested on wafers) . TJ=25C Parameter V(BR)CES VCE(on) VGE(th) ICES IGES Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate Emitter Leakage Current Min. 1200 --- 5.0 --- --- Typ. --- 1.16 --- 3.0 --- Max. Units --- 1.35 7.5 25 400 Conditions VGE = 0V, IC = 250A VGE = 15V, IC = 20A , TJ=25C IC = 7.0mA , VGE = VCE VCE = 1200V, VGE = 0V VCE = 0V, VGE = 30V V A nA f Electrical Characteristics (Not subject to production test- Verified by design/characterization) Parameter VCE(on) SCSOA Collector-to-Emitter Saturation Voltage Short Circuit Safe Operating Area Min. --- --- 6 Typ. 2.15 2.85 --- Max. Units 2.45 3.15 --- V s Conditions VGE = 15V, IC = 200A , TJ = 25C VGE = 15V, IC = 200A , TJ = 175C VGE=15V, VCC=800V, RG= 5, VP=1200V,TJ = 150C TJ = 150C, IC = 800A VCC = 960V, Vp =1200V Rg = 5, VGE = +20V to 0V RBSOA Ciss Coss Crss Qg Qge Qgc Reverse Bias Safe Operating Area Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) FULL SQUARE --- --- --- -- -- -- 24120 890 510 920 250 430 --- --- --- -- -- -- pF VGE = 0V VCE = 25V = 1.0MHz, IC = 200A VGE = 15V VCC = 600V nC Switching Characteristics (Inductive Load-Not subject to production test-Verified by design/ characterization) Parameter td(on) tr td(off) tf td(on) tr td(off) tf Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On delay time Rise time Turn-Off delay time Fall time Min. -- -- -- -- -- -- -- -- Typ. 190 140 1010 60 180 150 1140 80 Max. Units -- -- -- -- -- -- -- -- Conditions IC = 200A, VCC = 600V RG = 5, VGE=15V TJ = 25C d ns IC = 200A, VCC = 600V RG = 5, VGE=15V TJ = 150C Notes: Depending on thermal properties of assembly Values influenced by parasitic L and C in measurement VCC = 80% (VCES), VGE = 20V, L = 28 H, RG = 5 . Refer to AN-1086 for guidelines for measuring V(BR)CES safely 2 www.irf.com AUIRG7CH80K6B-M Chip drawings available upon request Additional Testing and Screening For Customers requiring product supplied as Known Good Die (KGD) or requiring specific die level testing, please contact your local IR Sales. Shipping Three shipping options are offered. * Un-sawn wafer * Die in waffle pack (consult the IR Die Sales team for availability) * Die on film (consult the IR Die Sales team for availability) Tape and Reel is also available for some products. Please consult your local IR sales office or email http:// die.irf.com for additional information. Please specify your required shipping option when requesting prices and ordering Die product. If not specified, Un-sawn wafer will be assumed. Handling * * * Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as defined in MIL-HDBK-263. Product must be handled only in a class 10,000 or better-designated clean room environment. Singulated die are not to be handled with tweezers. A vacuum wand with a non-metallic ESD protected tip should be used. Wafer/Die Storage * Proper storage conditions are necessary to prevent product contamination and/or degradation after shipment. * Un-sawn wafers and singulated die can be stored for up to 12 months when in the original sealed packaging at room temperature (45% +/- 15% RH controlled environment). * Un-sawn wafers and singulated die that have been opened can be stored when returned to their containers and placed in a Nitrogen purged cabinet, at room temperature (45% +/- 15% RH controlled environment). * Note: To reduce the risk of contamination or degradation, it is recommended that product not being used in the assembly process be returned to their original containers and resealed with a vacuum seal process. * Sawn wafers on a film frame are intended for immediate use and have a limited shelf life. * Die in Surf Tape type carrier tape are intended for immediate use and have a limited shelf life. This is primarily due to the nature of the adhesive tape used to hold the product in the carrier tape cavity. This product can be stored for up to 30 days. This applies whether or not the material has remained in its original sealed container. Further Information For further information please contact your local IR Sales office or email your enquiry to http://die.irf.com Data and specifications subject to change without notice. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/2010 www.irf.com 3 |
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